Dr. Suhaidi Shafie
Fundamental of CMOS Image Sensors
Date : 27th May 2015
Time : 2.00 pm – 3.00 pm
Venue : Dewan 3, UTHM
Charge-coupled devices (CCD’s) have been the dominant technology for image sensors for a long time because no other technology could serve better performance than CCD’s. The development of pinned photodiode technology in CMOS image sensors however dramatically improves the image quality and in the past ten years, the interest in CMOS image sensors has increased in all kind of electronic cameras. CMOS image sensors provide significant advantages over CCD’s such as the low power consumption, the integration of on-chip signal processing circuitry, and special functions and performances like reading of region of interest, high-speed readout, and digital outputs. Recent CMOS image sensors have advantage in lower noise performance over the CCD’s, especially at high frame rate. Column parallel low-noise readout circuits and analog-to-digital converters contribute the improvement of the noise performance at high frame rates.
Suhaidi Shafie received the Doctor of Engineering (Nanovision) from Shizuoka University in 2008. Then, he joined Universiti Putra Malaysia as a Senior Lecturer. His research interests include CMOS Image Sensor, Sensor Interface Circuit, SAR ADC, Capacitance-to-digital Converter and Graphene based DSSC. He is a senior member of the IEEE (CASS, EDS) & IAENG. His current projects are Ultra Low Power SAR ADC (collaboration with MIMOS Bhd), Hall-Effect Sensor based rotary encoder, TB detection and counting and Dye Sensitized Solar Cell.